Description
The SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation volt age. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.

FEATUREs
• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-Emitter Voltage, VCEO= 70 V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100 " (2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC