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S15A30 数据手册 ( 数据表 ) - Mospec Semiconductor

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零件编号
S15A30

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Mospec
Mospec Semiconductor 

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150`C Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Mateial used Carries Underwriters Laboratory
   Flammability Classification 94V-O
* Plastic Material used Carries Underwriters Laboratory

S15A30

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