RKP203KN 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Adopting the trench structure improves low capacitance. (C = 0.31 pF max)
• Low forward resistance. (rf = 1.5 Ω max)
• Low operation current.
• Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products.
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching ( Rev : 2006 )
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching ( Rev : 2006 )
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics