RJH60F0DPK(2010) 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)
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Silicon N-Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High speed power switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
( Rev : 2010 )
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
Silicon N Channel IGBT High Speed Power Switching
Renesas Electronics
