N-Channel Enhancement-Mode Power Field-Effect Transistors

   The RFM10N12 and RFM10N1S and theRFP10N12 and RFP10N15* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters,motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gatedrive power. These types can be operated directly from Integrated circuits.

FEATUREs:
◾ SO/4 is power-dissipation limited
◾ Nanosecond switching speeds
◾ Linear transfer characteristics
◾ High Input Impedance
◾ Majority carrier devic