零件编号
RD12MVS1
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8 Pages
File Size
552.2 kB
生产厂家
Mitsumi
RD12MVS1 数据手册 ( 数据表 ) - Mitsumi
Mitsumi
DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
零件编号
产品描述 (功能)
视图
生产厂家
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
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