零件编号
RD12MVP1
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生产厂家
Mitsumi
RD12MVP1(2006) 数据手册 ( 数据表 ) - Mitsumi
Mitsumi
DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
• High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
• High Efficiency: 55%min. (175MHz)
• No gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
零件编号
产品描述 (功能)
视图
生产厂家
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2006 )
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RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
( Rev : 2010 )
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RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
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