RD09MUP2(2006) 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
生产厂家

MITSUBISHI ELECTRIC
DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
FEATURES
• High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
• High Efficiency: 50%min. (520MHz)
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
( Rev : 2006 )
MITSUBISHI ELECTRIC