零件编号
RD02MUS1B
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MITSUBISHI ELECTRIC
RD02MUS1B(2010) 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
零件编号
产品描述 (功能)
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生产厂家
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Quanzhou Jinmei Electronic
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Quanzhou Jinmei Electronic
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Quanzhou Jinmei Electronic
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2010 )
MITSUBISHI ELECTRIC
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