RD02MUS1 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
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MITSUBISHI ELECTRIC
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2010 )
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RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2006 )
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RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
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