RD01MUS1(2006) 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
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MITSUBISHI ELECTRIC
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ( Rev : 2010 )
MITSUBISHI ELECTRIC