RCA1000 数据手册 ( 数据表 ) - GE Solid State
生产厂家
GE Solid State
8-Ampere Silicon N-P-N Darlington Power Transistors
For Use as Output Devices in General-Purpose Switching and Amplifier Applications
FEATUREs:
■ High dc current gain:
hFE = 1000 min, at IC = 3 A
■ Monolithic construction
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
Unspecified
15-Ampere N-P-N Darlington Power Transistors
General Semiconductor
10-Ampere N-P-N Monolithic Darlington Power Transistors
GE Solid State
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor
15-Ampere N-P-N Monolithic Darlington Power Transistor
GE Solid State
N-P-N SILICON POWER TRANSISTORS
New Jersey Semiconductor
N-P-N SILICON POWER TRANSISTORS
New Jersey Semiconductor
N-P-N POWER SILICON TRANSISTORS
New Jersey Semiconductor
10 AMPERE POWER DARLINGTON TRANSISTORS
New Jersey Semiconductor
P-N-P SILICON POWER TRANSISTORS
Unspecified
