R6504ENX 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
DESCRIPTION
• Designed for use in switch mode power supplies and general purpose applications.
FEATURES
• Drain Current –ID= 4.0A@ TC=25℃
Drain Source Voltage- : VDSS=650V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor