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QPD1025 数据手册 ( 数据表 ) - Qorvo, Inc

QPD1025 image

零件编号
QPD1025

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26 Pages

File Size
3 MB

生产厂家
QORVO
Qorvo, Inc 

Product Overview
The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 0.96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
RoHS compliant
Evaluation boards are available upon request.


KEY FEATUREs
• Frequency: 0.96 to 1.215 GHz
• Output Power (P3dB)1: 1862 W
• Linear Gain1: 22.5 dB
• Typical PAE3dB1: 77.2%
• Operating Voltage: 65 V
• CW and Pulse capable
   Note 1: @ 1.0 GHz Load Pull


APPLICATIONs
• IFF Transponders
• DME radar
• Avionics


零件编号
产品描述 (功能)
视图
生产厂家
1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor ( Rev : 2020 )
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