2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)

The HYB 3117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3117805BSJ to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.

Advanced Information
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
   max. 432 mW active (-50 version)
   max. 396 mW active (-60 version)
   max. 360 mW active (-70 version)
   7.2 mW standby (LV-TTL)
   3.6 mW standby (CMOS)
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms (2k-Refresh)
• Plastic Package: P-SOJ-28-3 400 mil