零件编号
PTF191601
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Infineon Technologies
PTF191601 数据手册 ( 数据表 ) - Infineon Technologies
Infineon Technologies
Description
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
FEATUREs
• Broadband internal matching
• Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
零件编号
产品描述 (功能)
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生产厂家
LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz ( Rev : 2004 )
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