PMV37EN 数据手册 ( 数据表 ) - NXP Semiconductors.
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NXP Semiconductors.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
◾ Logic-level compatible
◾ Very fast switching
◾ Trench MOSFET technology
APPLICATIONs
◾ Relay driver
◾ High-speed line driver
◾ Low-side load switch
◾ Switching circuits
30 V, 6 A N-channel Trench MOSFET
NXP Semiconductors.
30 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
30 V, N-channel Trench MOSFET ( Rev : 2013 )
NXP Semiconductors.
30 V, N-channel Trench MOSFET ( Rev : 2014 )
NXP Semiconductors.
30 V, N-channel Trench MOSFET
NXP Semiconductors.
30 V N-channel Trench MOSFET ( Rev : 2012 )
NXP Semiconductors.
30 V N-channel Trench MOSFET
NXP Semiconductors.
30 V, N-channel Trench MOSFET
NXP Semiconductors.
30 V N-channel Trench MOSFET ( Rev : 2012 )
NXP Semiconductors.
30 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved