PMV30XN 数据手册 ( 数据表 ) - NXP Semiconductors.
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NXP Semiconductors.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
◾ Low threshold voltage
◾ Very fast switching
◾ Trench MOSFET technology
APPLICATIONs
◾ Relay driver
◾ High-speed line driver
◾ Low-side loadswitch
◾ Switching circuits
Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
TY Semiconductor
Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
ON Semiconductor
Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
TY Semiconductor
Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
ON Semiconductor
Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
ON Semiconductor
20 V, N-channel Trench MOSFET
NXP Semiconductors.
20 V, N-channel Trench MOSFET
NXP Semiconductors.
20 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
20 V, single N-channel Trench MOSFET
ZP Semiconductor
20 V, single N-channel Trench MOSFET
ZP Semiconductor