PMK35EP 数据手册 ( 数据表 ) - NXP Semiconductors.
生产厂家

NXP Semiconductors.
General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
FEATUREs and benefits
■ Low conduction losses due to low on-state resistance
APPLICATIONs
■ Battery management
■ Load switching
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
P-channel TrenchMOS extremely low level FET
Nexperia B.V. All rights reserved
P-channel TrenchMOS extremely low level FET
NXP Semiconductors.
P-channel TrenchMOS extremely low level FET
NXP Semiconductors.
P-channel extremely low level FET
Philips Electronics
TrenchMOS™ ultra low level FET
NXP Semiconductors.
TrenchMOS™ ultra low level FET
Philips Electronics
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.