DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

FEATURES
• Input matching cell allows an easier
   design of circuits
• Diffused emitter ballasting resistors
   providing excellent current sharing
   and withstanding a high VSWR
• Interdigitated structure provides
   high emitter efficiency
• Gold metallization realizes very
   stable characteristics and excellent
   lifetime
• Multicell geometry gives good
   balance of dissipated power and
   low thermal resistance.

APPLICATIONS
   Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range.