PHPT61002NYC 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61002PYC
FEATUREs and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
APPLICATIONs
• Load switch
• Power management
• Linear mode voltage regulator
• Backlighting apllications
100 V, 2 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
50 V, 2 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
50 V, 2 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
60V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
45 V, 4 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
40 V, 15 A NPN high power bipolar transistor
NXP Semiconductors.