PHPT60603NY 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60603PY
FEATUREs and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AECQ-101 qualified.
APPLICATIONs
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting apllications
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