PDTC124EMB 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA124EMB
FEATUREs and benefits
■ 100 mA output current capability
■ Reduces component count
■ Built-in bias resistors
■ Reduces pick and place costs
■ Simplifies circuit design
■ AEC-Q101 qualified
■ Leadless ultra small SMD plastic
package
■ Low package height of 0.37 mm
APPLICATIONs
■ Low-current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors
in digital applications
■ Mobile applications
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Nexperia B.V. All rights reserved
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
Philips Electronics
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
NXP Semiconductors.
PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
Nexperia B.V. All rights reserved
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
Philips Electronics
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
NXP Semiconductors.
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
NXP Semiconductors.
NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open
Nexperia B.V. All rights reserved
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
NXP Semiconductors.
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ ( Rev : 2008 )
NXP Semiconductors.