Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.

FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V
■ New RF plastic package