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PD55003-E 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
PD55003-E

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Description
The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003’s superior linearity performance makes it an ideal solution for car mobile radio.


FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V
■ New RF plastic package

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生产厂家
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2008 )
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2011 )
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010_05 )
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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs ( Rev : 2006 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2012 )
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