General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

FEATUREs and benefits
■ Low collector-emitter saturation
   voltage VCEsat
■ High collector current capability
   IC and ICM
■ High collector current gain (hFE) at
   high IC
■ High efficiency due to less heat
   generation
■ Smaller Printed-Circuit Board (PCB)
   area than for conventional transistors
■ AEC-Q101 qualified

APPLICATIONs
■ High-voltage DC-to-DC conversion
■ High-voltage MOSFET gate driving
■ High-voltage motor control
■ High-voltage power switches
   (e.g. motors, fans)
■ Automotive applications