PBHV9050Z 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
FEATUREs and benefits
◾ High voltage
◾ Low collector-emitter saturation voltage VCEsat
◾ High collector current capability IC and ICM
◾ High collector current gain (hFE) at high IC
◾ AEC-Q101 qualified
◾ Medium power SMD plastic package
APPLICATIONs
◾ Electronic ballasts
◾ LED driver for LED chain module
◾ LCD backlighting
◾ Automotive motor management
◾ Flyback converters
◾ Hook switch for wired telecom
◾ Switch Mode Power Supply (SMPS)
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