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PA2423L(2001) 数据手册 ( 数据表 ) - SiGe Semiconductor, Inc.

PA2423L image

零件编号
PA2423L

Other PDF
  2005   lastest PDF  

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page
11 Pages

File Size
344.3 kB

生产厂家
SIGE
SiGe Semiconductor, Inc. 

Product Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in class 1 Bluetoothtm applications.


FEATUREs
❐ +22.5dBm at 45% Power Added Efficiency
❐ Low current 80mA typical @ Pout=+20 dBm
❐ Temperature stability better than 1dB
❐ Power-control and Power-down modes
❐ Single 3.3 V Supply Operation
❐ Temperature rating: -40C to +85C
❐ Very small plastic package - 6 lead LPCC
   (1.6mm x 3.0mm)


APPLICATIONs
❐ Bluetoothtm Class 1
❐ USB Dongles
❐ Laptops
❐ Access Points
❐ Cordless Piconets


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