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PA2423G-EV 数据手册 ( 数据表 ) - SiGe Semiconductor, Inc.

PA2423G image

零件编号
PA2423G-EV

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page
9 Pages

File Size
363 kB

生产厂家
SIGE
SiGe Semiconductor, Inc. 

Product Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in Class 1 Bluetoothtm applications.


FEATUREs
❐ +22.5 dBm at 47% Power Added Efficiency
❐ Low current 80 mA typical @ Pout=+20 dBm
❐ Temperature stability better than 1dB
❐ Power-control and Power-down modes
❐ -40C to +85C temperature range
❐ Gold bump bare die (0.63mm x 0.96mm)


APPLICATIONs
❐ Bluetoothtm Class 1
❐ USB Dongles
❐ Laptops
❐ Access Points
❐ Cordless Piconets
❐ Flip chip and chip-on-board applications


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