DESCRIPTION
The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source.
This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on.

FEATURES
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
   RDS(on)1 = 135 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)
   RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
   RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)
• Low reverse current (Schottky barrier diode)
   IR = 20 µA MAX. (VR = 40 V)