PA1911A 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
DESCRIPTION
The µPA1911A is a switching device which can be driven directly by a 2.5 V power source.
The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5 V power source
• Low on-state resistance
RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology