P-TO251 数据手册 ( 数据表 ) - Infineon Technologies
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Infineon Technologies
Cool MOS™ Power Transistor
FEATURE
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• Pb-free lead plating; Rohs compliant
• Qualified according to JEDEC0) for target applications
Cool MOS Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor ( Rev : 2008 )
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2009 )
Infineon Technologies