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NX8349TS(2013) 数据手册 ( 数据表 ) - California Eastern Laboratories.

NX8349TS image

零件编号
NX8349TS

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9 Pages

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316.3 kB

生产厂家
CEL
California Eastern Laboratories. 

DESCRIPTION
The NX8349TS is 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver.


FEATURES
• Internal optical isolator
• Optical output power Pf = −3 dBm
• Low threshold current Ith = 8 mA TYP. @ TC = 25°C
• Wide operating temperature range TC = −5 to +95°C
• InGaAs monitor PIN-PD


APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fibre Channel


零件编号
产品描述 (功能)
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生产厂家
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION ( Rev : 2013 )
PDF
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF
Renesas Electronics

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