NX6314EH 数据手册 ( 数据表 ) - California Eastern Laboratories.
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California Eastern Laboratories.
DESCRIPTION
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
FEATURES
• Optical output power PO = 5.0 mW
• Low threshold current Ith = 10 mA
• Differential efficiency ηd = 0.4 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm
APPLICATIONS
• 1.25 Gb/s FTTH P2P
• 3 Gb/s BTS
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics