NX3008PBKV 数据手册 ( 数据表 ) - Philips Electronics
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Philips Electronics
General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
◾ Very fast switching
◾ Low threshold voltage
◾ Trench MOSFET technology
◾ ESD protection up to 2 kV
◾ AEC-Q101 qualified
Applications
◾ Relay driver
◾ High-speed line driver
◾ High-side loadswitch
◾ Switching circuits