NTE367 数据手册 ( 数据表 ) - NTE Electronics
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NTE Electronics
Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
FEATUREs:
● Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
● Characterized with Series Equivalent Large–Signal Impedance Parameters
● Built–In Matching Network for Broadband Operation
● Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive
Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz
NTE Electronics
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz
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Silicon NPN Transistor RF Power Amp, PO = 4W
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Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE Electronics