NTE221 数据手册 ( 数据表 ) - NTE Electronics
生产厂家
NTE Electronics
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
FEATUREs:
• Extremely Low Feedback Capacitance
• High Power Gain
N-CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)
Toshiba
IF amplifier for satellite TV receivers
Philips Electronics
INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUITS FOR TV AND RADIO RECEIVERS
Unspecified
INTETRATED CIRCUITS FOR TV AND RADIO RECEIVERS
ITT Cannon
Deflection processor for computer controlled TV receivers
Philips Electronics
DUAL-GATE VHF AMPLIFIER N-CHANNEL - DEPLETION
Digitron Semiconductors
I.F. amplifier and demodulator for multistandard TV receivers
Philips Electronics
