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NTD2955-1G(2019) 数据手册 ( 数据表 ) - ON Semiconductor

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NTD2955-1G

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MOSFET – Power, P-Channel, DPAK -60 V, -12 A

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.


FEATUREs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and
   to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications
   Requiring Unique Site and Control Change Requirements;
   AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant


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