SWITCHMODE Schottky Power Rectifier
DPAK Power Surface Mount Package

The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.

FEATUREs
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −
   May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured − Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL 94 V−0 @ 0.125 in
• This is a Pb−Free Device

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds