NJW0302G 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min)
• Good Linearity of hFE
• Complement to Type NJW0281G
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high fidelity audio amplifier and
other linear applications
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Shenzhen SPTECH Microelectronics Co., Ltd.
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