IGBT with Monolithic Free Wheeling Diode

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

FEATUREs
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device

Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching