datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Renesas Electronics  >>> NESG340034 PDF

NESG340034 数据手册 ( 数据表 ) - Renesas Electronics

NESG340034 image

零件编号
NESG340034

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
202 kB

生产厂家
Renesas
Renesas Electronics 

DESCRIPTION
The NESG340034 is an ideal choice for low noise, low distortion amplification.


FEATURES
• NF = 0.65 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz
• Po (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =12.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS3) : fT = 10 GHz
• This product is improvement of ESD
• 3-pin power minimold (34 PKG)


APPLICATIONS
• Suitable for up to 1 GHz applications.
   e.g. LNA (Low Noise Amplifier) or booster amplifier for Digital-TV.


零件编号
产品描述 (功能)
视图
生产厂家
NPN Silicon Germanium RF Transistor ( Rev : 2004 )
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor
PDF
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
PDF
NEC => Renesas Technology
NPN Silicon Germanium RF Transistor* ( Rev : 2004 )
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor* ( Rev : 2007 )
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor*
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor ( Rev : 2008 )
PDF
Infineon Technologies
NPN Silicon Germanium RF Transistor
PDF
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
PDF
Renesas Electronics

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]