NESG3031M05(2004) 数据手册 ( 数据表 ) - California Eastern Laboratories.
生产厂家

California Eastern Laboratories.
FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz
NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
• M05 PACKAGE:
Flat-lead 4 pin thin-type super minimold package
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.