DESCRIPTION AND APPLICATIONS
NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation