DESCRIPTION
NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NECs stringent quality and control procedures.

FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel
• USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
• HIGH OUTPUT POWER:
    30 dBm TYP with 5.0 V Vdc
    27 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN: 12 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE: 30°C/W