
California Eastern Laboratories.
DESCRIPTION
NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NECs stringent quality and control procedures.
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel
• USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
• HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE: 5°C/W