General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V).

FEATUREs
• –3.5 A, –20 V RDS(ON) = 100 mΩ @ VGS = –10 V
                         RDS(ON) = 190 mΩ @ VGS = –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

APPLICATIONs
• Power management
• Load switch
• Battery protection