General Description
   SuperSOT−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.

FEATUREs
• 1.7 A, 30 V
   ✦ RDS(on) = 0.125 Ω  @ VGS = 4.5 V
   ✦ RDS(on) = 0.085 Ω @ VGS = 10 V
• Industry Standard Outline SOT−23 Surface Mount Package Using
   Proprietary SUPERSOT−3 Design for Superior Thermal and
   Electrical Capabilities
• High Density Cell Design for Extremely Low RDS(on)
• Exceptional On−Resistance and Maximum DC Current Capability
• Compact Industry Standard SOT−23 Surface Mount Package
• This is a Pb−Free Device