General Description
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

FEATUREs
1.7A, 30 V,  RDS(ON) = 0.125 W @ VGS = 4.5 V
                RDS(ON) = 0.085 W @ VGS = 10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount package.