Single 6 A High-Speed, Low-Side SiC MOSFET Driver

   The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.

FEATUREs
• High Peak Output Current with Split Output Stages to allow
   independent Turn−ON/Turn−OFF Adjustment;
   ✦ Source Capability: 6 A
   ✦ Sink Capability: 6 A
• Extended Positive Voltage Rating for Efficient SiC MOSFET
   Operation during the Conduction Period
• User−adjustable Built−in Negative Charge Pump for Fast Turn−off
   and Robust dV/dt Immunity
• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply
• Adjustable Under−Voltage Lockout
• Desaturation Function
• Thermal Shutdown Function (TSD)
• Small & Low Parasitic Inductance QFN24 Package

Typical Applications
• Driving SiC MOSFET
• Industrial Inverters, Motor Drivers
• PFC, AC to DC and DC to DC Converters